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MTB1306 - Power MOSFET

Key Features

  • E (ns) 10 18 7.5 QT 15 VGS 12 5.0 9.0 Q1 2.5 Q3 0 0 10 Q2 6.0 TJ = 25°C VDS ID = 75 A 20 30 40 QG, TOTAL GATE CHARGE (nC) 50 3.0 0 60 Figure 8. Gate.
  • To.
  • Source and Drain.
  • To.
  • Source Voltage versus Total Charge VDS, DRAIN.
  • TO.
  • SOURCE.

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Datasheet Details

Part number MTB1306
Manufacturer onsemi
File Size 211.93 KB
Description Power MOSFET
Datasheet download datasheet MTB1306 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MTB1306 Preferred Device Power MOSFET 75 Amps, 30 Volts, Logic Level N−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.