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  ON Semiconductor Electronic Components Datasheet  

MTB1306 Datasheet

Power MOSFET

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MTB1306
Preferred Device
Power MOSFET
75 Amps, 30 Volts, Logic Level
N−Channel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a drain−to−source diode with fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured − Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 M)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp 10 ms)
Drain Current
− Continuous
− Continuous @ 100°C
− Single Pulse (tp 10 µs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
30 Vdc
30 Vdc
± 20 Vdc
± 20 Vpk
75 Adc
59
225 Apk
150 Watts
1.2 W/°C
2.5 Watts
Operating and Storage Temperature
Range
TJ, Tstg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 75 Apk, L = 0.1 mH, RG = 25 )
EAS
mJ
280
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1.)
RθJC
RθJA
RθJA
°C/W
0.8
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 5.0
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
75 AMPERES
30 VOLTS
RDS(on) = 6.5 m
N−Channel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB1306
YWW
12
Gate Drain
3
Source
MTB1306
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB1306
MTB1306T4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev.XXX
1
Publication Order Number:
MTB1306/D


  ON Semiconductor Electronic Components Datasheet  

MTB1306 Datasheet

Power MOSFET

No Preview Available !

MTB1306
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2.)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 38 Adc)
(VGS = 5.0 Vdc, ID = 38 Adc)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 75 Adc)
(VGS = 10 Vdc, ID = 38 Adc, TJ = 150°C)
Forward Transconductance (VDS = 3.0 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3.)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc,
RG = 4.7 )
Gate Charge
(VDS = 24 Vdc, ID = 75 Adc,
VGS = 5.0 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 20 Adc, VGS = 0 Vdc)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 20 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
2. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
Min Typ Max Unit
30 −
Vdc
µAdc
− − 10
− − 100
− − 100 nAdc
Vdc
1.0 1.5 2.0
mW
− 5.8 6.5
− 7.4 8.5
Vdc
− 0.44 0.5
− − 0.38
15 55
− mhos
2560
3584
pF
1305
1827
− 386 772
− 17 35 ns
− 170 340
− 68 136
− 145 290
− 50 70 nC
− 8.3 −
− 25.3 −
− 17.2 −
Vdc
− 0.75 1.1
− 0.64 −
− 84 − ns
− 35 −
− 53 −
− 0.13 −
µC
http://onsemi.com
2


Part Number MTB1306
Description Power MOSFET
Maker ON Semiconductor
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MTB1306 Datasheet PDF






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