Datasheet4U Logo Datasheet4U.com

MTB23P06V - Power MOSFET

Features

  • 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate.
  • To.
  • Source and Drain.
  • To.
  • Source Voltage versus Total Charge VDS, DRAIN.
  • TO.
  • SOURCE.

📥 Download Datasheet

Datasheet preview – MTB23P06V

Datasheet Details

Part number MTB23P06V
Manufacturer ON Semiconductor
File Size 254.08 KB
Description Power MOSFET
Datasheet download datasheet MTB23P06V Datasheet
Additional preview pages of the MTB23P06V datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
MTB23P06V Preferred Device Power MOSFET 23 Amps, 60 Volts P−Channel D2PAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 1.
Published: |