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  ON Semiconductor Electronic Components Datasheet  

MTB23P06V Datasheet

Power MOSFET

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MTB23P06V
Preferred Device
Power MOSFET
23 Amps, 60 Volts
PChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MΩ)
GatetoSource Voltage
Continuous
Nonrepetitive (tp 10 ms)
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 15
± 25
23
15
81
90
0.60
3.0
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 23 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
794 mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJA
RθJA
°C/W
1.67
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from Case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
23 AMPERES
60 VOLTS
RDS(on) = 120 mΩ
PChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB23P06V
YWW
12
Gate Drain
3
Source
MTB23P06V
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB23P06V
MTB23P06VT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTB23P06V/D


  ON Semiconductor Electronic Components Datasheet  

MTB23P06V Datasheet

Power MOSFET

No Preview Available !

MTB23P06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 11.5 Adc)
DrainSource OnVoltage
(VGS = 10 Vdc, ID = 23 Adc)
(VGS = 10 Vdc, ID = 11.5 Adc, TJ = 150°C)
Forward Transconductance
(VDS = 10.9 Vdc, ID = 11.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 30 Vdc, ID = 23 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 23 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 23 Adc, VGS = 0 Vdc)
(IS = 23 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 23 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60
60.5
Vdc
mV/°C
μAdc
− − 10
− − 100
− − 100 nAdc
2.0 2.8 4.0 Vdc
5.3 mV/°C
0.093 0.12 Ohm
Vdc
2.1 3.3
− − 3.2
5.0 11.5
Mhos
1160
1620
pF
380 530
105 210
13.8 30 ns
98.3 200
41 80
62 120
38 50 nC
7.0
18
14
Vdc
2.2 3.5
1.8
142
ns
100
41
0.804
μC
nH
3.5
4.5
7.5 nH
http://onsemi.com
2


Part Number MTB23P06V
Description Power MOSFET
Maker ON Semiconductor
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MTB23P06V Datasheet PDF






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