MTB3N60E - High Energy Power FET

ON Semiconductor

MTB3N60E Description

MTB3N60E Product Preview TMOS E *FET.™ High Energy Power FET D2PAK for Surface Mount N *Channel Enhancement *Mode Silicon Gate Th.

MTB3N60E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

📥 Download Datasheet

MTB3N60E Datasheet Preview — Preview of MTB3N60E PDF

Datasheet Details

Part number: MTB3N60E
Manufacturer: ON Semiconductor ↗
File Size: 137.47 KB
Datasheet: MTB3N60E-ONSemiconductor.pdf
Description: High Energy Power FET

📁 Related Datasheet

MTB3N100E - TMOS POWER FET (Motorola)
MTB3N120E - TMOS POWER FET (Motorola)
MTB30N06EL - TMOS Power FET (Motorola Semiconductor)
MTB30N06ELT4 - TMOS Power FET (Motorola Semiconductor)
MTB30N06VL - TMOS POWER FET (Motorola)
MTB30P06V - TMOS POWER FET (Motorola)
MTB33N10E - TMOS POWER FET (Motorola)
MTB35N04J3 - N -Channel Enhancement Mode Power MOSFET (Cystech Electonics)

📌 All Tags

High Energy Power FET ON Semiconductor

ON Semiconductor MTB3N60E-like datasheet

MTB36N06V - Power MOSFET
MTB1306 - Power MOSFET
MTB15N06V - Power Field Effect Transistor
MTB16N25E - High Energy Power FET
MTB23P06V - Power MOSFET
MTB29N15E - Power MOSFET