MTB3N60E Datasheet | onsemi

Product Preview TMOS E- FET.™ High Energy Power FET D2PAK for Surface Mount N- Channel Enhancement- Mode Silicon Gate This advanced high voltage TMOS E- FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain- to- source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. - Avalanche Energy Capability Specified at Elevated Temperature - Low Stored Gate Charge for Efficient Switching - Internal Source- to- Drain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode - Source- to- Drain Diode Recovery Time parable to Discrete Fast Recovery Diode http://onsemi. TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 W D2PAK CASE 418B- 03 STYLE 2 ®G © Semiconductor ponents Industries, LLC, 2006 August, 2006 - Rev. 1 Publication Order Number: MTB3N60E/D MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage - Continuous Gate- Source Voltage - Non- repetitive VDSS VDGR VGS VGSM Drain Current - Continuous Drain Current - Continuous @ 100°C Drain Current - Pulsed ID ID IDM Total Power Dissipation @ TC = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range PD TJ, Tstg UNCLAMPED DRAIN- TO- SOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C) Single Pulse Drain- to- Source Avalanche...