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MTB3N60E Datasheet

High Energy Power FET

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MTB3N60E
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TMOS E−FET.
High Energy Power FET
D2PAK for Surface Mount
NChannel EnhancementMode Silicon
Gate
This advanced high voltage TMOS EFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a draintosource diode with fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, PWM motor controls and other
inductive loads, the avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Capability Specified at Elevated Temperature
Low Stored Gate Charge for Efficient Switching
Internal SourcetoDrain Diode Designed to Replace External Zener
Transient Suppressor — Absorbs High Energy in the Avalanche
Mode
SourcetoDrain Diode Recovery Time Comparable to Discrete
Fast Recovery Diode
http://onsemi.com
TMOS POWER FET
3.0 AMPERES 600 VOLTS
RDS(on) = 2.2 W
D2PAK
CASE 418B03
STYLE 2
D
®G
S
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 1
1
Publication Order Number:
MTB3N60E/D


  ON Semiconductor Electronic Components Datasheet  

MTB3N60E Datasheet

High Energy Power FET

No Preview Available !

MTB3N60E
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage — Continuous
GateSource Voltage — Nonrepetitive
VDSS
VDGR
VGS
VGSM
Drain Current — Continuous
Drain Current — Continuous @ 100°C
Drain Current — Pulsed
ID
ID
IDM
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C(1)
Operating and Storage Temperature Range
PD
TJ, Tstg
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse DraintoSource Avalanche Energy — TJ = 25°C
Single Pulse DraintoSource Avalanche Energy — TJ = 100°C
Repetitive Pulse DraintoSource Avalanche Energy
WDSR(2)
WDSR(3)
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case°
Thermal Resistance — Junction to Ambient°
Thermal Resistance — Junction to Ambient(1)
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 10 seconds
(1) When surface mounted to an FR4 board using the minimum recommended pad size
(2) VDD = 50 V, ID = 3.0 A
(3) Pulse Width and frequency is limited by TJ(max) and thermal response
This document contains information on a product under development. Motorola reserves
the right to change or discontinue this product without notice.
EFET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
RθJC
RθJA
RθJA
TL
Value
600
600
± 20
± 40
3.0
2.4
14
75
0.6
2.5
55 to 150
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Watts
W/°C
Watts
°C
290 mJ
46
7.5
1.67 °C/W
62.5
50
260 °C
http://onsemi.com
2


Part Number MTB3N60E
Description High Energy Power FET
Maker ON Semiconductor
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