MTB3N60E datasheet by Motorola Semiconductor (now NXP Semiconductors).
| Part number | MTB3N60E |
|---|---|
| Datasheet | MTB3N60E_Motorola.pdf |
| File Size | 74.47 KB |
| Manufacturer | Motorola Semiconductor (now NXP Semiconductors) |
| Description | TMOS POWER FET |
|
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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain to source diode with fast recovery time. Designed for high...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MTB3N60E | High Energy Power FET | ON Semiconductor |
View all Motorola Semiconductor (now NXP Semiconductors) datasheets
| Part Number | Description |
|---|---|
| MTB3N100E | TMOS POWER FET |
| MTB3N120E | TMOS POWER FET |
| MTB30N06VL | TMOS POWER FET |
| MTB30P06V | TMOS POWER FET |
| MTB33N10E | TMOS POWER FET |
| MTB36N06E | TMOS POWER FET |
| MTB36N06V | TMOS POWER FET |
| MTB10N40E | TMOS POWER FET |
| MTB1306 | TMOS POWER FET |
| MTB15N06E | TMOS POWER FET |
