MTB3N60E Datasheet and Specifications PDF

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N60E/D Product Preview TMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This adva.

ry Time Comparable to Discrete Fast Recovery Diode MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
*Source Voltage Drain
*Gate Voltage (RGS = 1.0 MΩ) Gate
*Source Voltage
* Continuous Gate
*Source Voltage
* Non
*repetitive Drain Current
* Continuous Drain Current
* Continuous @ 100°C Drai.

MTB3N60E Product Preview TMOS E−FET.™ High Energy Power FET D2PAK for Surface Mount N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy i.

om TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS(on) = 2.2 W D2PAK CASE 418B
*03 STYLE 2 D ®G S © Semiconductor Components Industries, LLC, 2006 August, 2006
* Rev. 1 1 Publication Order Number: MTB3N60E/D MTB3N60E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Drain
*Source Volt.