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  ON Semiconductor Electronic Components Datasheet  

MTB50N06V Datasheet

Power MOSFET

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MTB50N06V
Preferred Device
Power MOSFET
42 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low voltage, high
speed switching applications in power supplies, converters and power
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected voltage
transients.
Avalanche Energy Specified
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage
Continuous
NonRepetitive (tp 10 ms)
Drain Current Continuous @ 25°C
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 μs)
Total Power Dissipation @ 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 20
± 25
42
30
147
125
0.83
3.0
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
Operating and Storage Temperature
Range
TJ, Tstg
55 to
175
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc,
IL = 42 Apk, L = 0.454 μH, RG = 25 Ω)
EAS
400 mJ
Thermal Resistance
JunctiontoCase
JunctiontoAmbient
JunctiontoAmbient (Note 1)
RθJC
RθJA
RθJA
°C/W
1.2
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 sec
TL
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
42 AMPERES
60 VOLTS
RDS(on) = 28 mΩ
NChannel
D
G
12
3
S
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB50N06V
AYWW
12
Gate Drain
3
Source
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB50N06V
MTB50N06VT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 5
1
Publication Order Number:
MTB50N06V/D


  ON Semiconductor Electronic Components Datasheet  

MTB50N06V Datasheet

Power MOSFET

No Preview Available !

MTB50N06V
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Temperature Coefficient (Negative)
Static DrainSource OnResistance (VGS = 10 Vdc, ID = 21 Adc)
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 42 Adc)
(ID = 21 Adc, TJ = 150°C)
Forward Transconductance (VDS = 6.25 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 25 Vdc, ID = 42 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 42 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(IS = 42 Adc, VGS = 0 Vdc)
(IS = 42 Adc, VGS = 0 Vdc, TJ = 150°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 42 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60
69
Vdc
mV/°C
μAdc
− − 10
− − 100
− − 100 nAdc
2.0 2.7 4.0 Vdc
3.0 mV/°C
0.025
0.028
Ohm
Vdc
1.4 1.7
− − 1.6
16 23
mhos
1644
2320
pF
465 660
112 230
12 20 ns
122 250
64 110
54 90
47 70 nC
9
21
16
Vdc
1.06 2.5
0.99
84 ns
73
11
0.28
μC
nH
3.5
4.5
7.5 nH
http://onsemi.com
2


Part Number MTB50N06V
Description Power MOSFET
Maker ON Semiconductor
PDF Download

MTB50N06V Datasheet PDF






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