900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  ON Semiconductor Electronic Components Datasheet  

MTB55N06Z Datasheet

Power MOSFET

No Preview Available !

MTB55N06Z
Preferred Device
Power MOSFET
55 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche mode and switch efficiently. This high energy device also
offers a draintosource diode with fast recovery time. Designed for
high voltage, high speed switching applications in power supplies,
PWM motor controls and other inductive loads, the avalanche energy
capability is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Avalanche Energy Capability Specified at Elevated Temperature
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Low Stored Gate Charge for Efficient Switching
Internal SourcetoDrain Diode Designed to Replace External Zener
Transient SuppressorAbsorbs High Energy in the Avalanche Mode
ESD Protected. Designed to Typically Withstand 400 V
Machine Model and 4000 V Human Body Model.
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
VDSS
60
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
60
GatetoSource Voltage
Continuous
NonRepetitive (tp 10 ms)
VGS
VGSM
± 20
± 40
Drain Current
Continuous @ TC = 25°C
Continuous @ TC = 100°C
Single Pulse (tp 10 μs)
ID 55
ID 35.5
IDM 165
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1.)
PD 113
0.91
2.5
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
°C
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VDS = 60 Vdc,
VGS = 10 Vdc, Peak IL = 55 Apk,
L = 0.3 mH, RG = 25 Ω)
EAS
454 mJ
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (Note 1.)
RθJC
RθJC
RθJA
°C/W
1.1
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
TL
260 °C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
55 AMPERES
60 VOLTS
RDS(on) = 18 mΩ
NChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB55N06Z
YWW
12
Gate Drain
3
Source
MTB55N06Z
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB55N06Z
MTB55N06ZT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 3
1
Publication Order Number:
MTB55N06Z/D


  ON Semiconductor Electronic Components Datasheet  

MTB55N06Z Datasheet

Power MOSFET

No Preview Available !

MTB55N06Z
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
(Cpk 2.0)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 2.0)
Static DraintoSource OnResistance
(VGS = 10 Vdc, ID = 27.5 Adc)
(Cpk 2.0)
DraintoSource OnVoltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 4.0 Vdc, ID = 27.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 30 Vdc, ID = 55 Adc,
VGS(on) = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 55 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min Typ Max Unit
60
53
Vdc
mV/°C
μAdc
− − 1.0
− − 10
− − 100 nAdc
Vdc
2.0 3.0 4.0
6.0 mV/°C
mΩ
14 18
Vdc
0.825
1.2
0.74 1.0
12 15
Mhos
1390
1950
pF
520 730
119 238
27 54 ns
157 314
116 232
126 252
40 56 nC
7.0
18
15
Vdc
0.93 1.1
0.82
57 ns
32
25
0.11
μC
nH
3.5
4.5
7.5
http://onsemi.com
2


Part Number MTB55N06Z
Description Power MOSFET
Maker ON Semiconductor
PDF Download

MTB55N06Z Datasheet PDF






Similar Datasheet

1 MTB55N06Z TMOS POWER FET
Motorola
2 MTB55N06Z Power MOSFET
ON Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy