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  ON Semiconductor Electronic Components Datasheet  

MTB60N06HD Datasheet

Power MOSFET

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MTB60N06HD
Preferred Device
Power MOSFET
60 Amps, 60 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DrainSource Voltage
DrainGate Voltage (RGS = 1.0 MΩ)
GateSource Voltage
Continuous
NonRepetitive (tp 10 ms)
Drain Current Continuous
Drain Current Continuous @ 100°C
Drain Current Single Pulse (tp 10 μs)
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(Note 1)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60
60
± 20
± 30
60
42.3
180
125
1.0
2.5
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 60 Apk, L = 0.3 mH, RG = 25 Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient, when mounted
with the minimum recommended pad size
EAS
RθJC
RθJA
RθJA
540
1.0
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10
seconds
TL
260
1. When mounted with the minimum recommended pad size.
Unit
Vdc
Vdc
Vdc
Vpk
Adc
Apk
Watts
W/°C
Watts
°C
mJ
°C/W
°C
http://onsemi.com
60 AMPERES
60 VOLTS
RDS(on) = 14 mΩ
NChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
T60N06HD
YWW
12
Gate Drain
3
Source
T60N06HD = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB60N06HD
MTB60N06HDT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MTB60N06HD/D


  ON Semiconductor Electronic Components Datasheet  

MTB60N06HD Datasheet

Power MOSFET

No Preview Available !

MTB60N06HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0 Vdc, ID = 250 μAdc)
Temperature Coefficient (Positive)
(Cpk 2.0) (Note 4)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 125°C)
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
(Cpk 3.0) (Note 4)
Static DrainSource OnResistance
(VGS = 10 Vdc, ID = 30 Adc)
(Cpk 3.0) (Note 4)
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 60 Adc)
(ID = 30 Adc, TJ =125°C)
Forward Transconductance
(VDS = 4.0 Vdc, ID = 30 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 3)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD= 30 Vdc, ID = 60 Adc,
VGS = 10 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 60 Adc,
VGS = 10 Vdc)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage
(IS = 60 Adc, VGS = 0 Vdc)
(IS = 60 Adc, VGS = 0 Vdc,
TJ = 125°C)
Reverse Recovery Time
(See Figure 15)
(IS = 60 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
2. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperature.
4. Reflects typical values. Cpk =
Max limit Typ
3 x SIGMA
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
60
2.0
15
Typ Max Unit
Vdc
−−
71 mV/°C
μAdc
10
100
nAdc
100
3.0
7.0
0.011
20
4.0
0.014
1.0
0.9
Vdc
mV/°C
Ohm
Vdc
mhos
1950
660
147
2800
920
300
pF
14 26
197 394
50 102
124 246
51 71
12
24
21
ns
nC
0.99
0.89
60
36
24
0.143
1.0
Vdc
ns
μC
4.5 nH
7.5 nH
http://onsemi.com
2


Part Number MTB60N06HD
Description Power MOSFET
Maker ON Semiconductor
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MTB60N06HD Datasheet PDF






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