MTB60N06HD Datasheet PDF - Motorola TMOS POWER FET Specs

MTB60N06HD - TMOS POWER FET

Datasheet Summary

Features

ctively adds to the resistance of the driving source, but the internal resistance is difficult to measure and, consequently, is not specified. The resistive switching time variation versus gate resistance (Figure 9) shows how typical switching performance is affected by the parasitic circuit elements. If the parasitics were not present, the slope of the curves would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common.

Datasheet Details

Part number	MTB60N06HD
Manufacturer	Motorola
File Size	280.76 KB
Description	TMOS POWER FET
Datasheet	MTB60N06HD Datasheet
Additional preview pages of the MTB60N06HD datasheet.

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Full PDF Text Transcription

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB60N06HD/D ™ Data Sheet HDTMOS E-FET.™ High Energy Power FET D2PAK for Surface Mount Designer's MTB60N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time.

Published: Sep 13, 2005 |