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  ON Semiconductor Electronic Components Datasheet  

MTB75N05HD Datasheet

Power MOSFET

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MTB75N05HD
Preferred Device
Power MOSFET
75 Amps, 50 Volts
NChannel D2PAK
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. The energy efficient design also
offers a draintosource diode with a fast recovery time. Designed for
low voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients.
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
Short Heatsink Tab Manufactured Not Sheared
Specially Designed Leadframe for Maximum Power Dissipation
w These devices are available in Pbfree package(s). Specifications herein
apply to both standard and Pbfree devices. Please see our website at
www.onsemi.com for specific Pbfree orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
DraintoSource Voltage
VDSS
50
DraintoGate Voltage (RGS = 1.0 MΩ)
VDGR
50
GatetoSource Voltage Continuous
VGS
± 20
Drain Current Continuous
ID 75
Drain Current Continuous @ 100°C
ID 65
Drain Current Single Pulse (tp 10 μs) IDM 225
Total Power Dissipation
Derate above 25°C
Total Power Dissipation @ TA = 25°C
(minimum footprint, FR4 board)
PD 125
1.0
2.5
Operating and Storage Temperature
Range
TJ, Tstg
55 to
150
Single Pulse DraintoSource Avalanche
Energy Starting TJ = 25°C
(VDD = 25 V, VGS = 10 V, Peak
IL = 75 A, L = 0.177 mH, RG = 25 Ω)
Thermal Resistance
Junction to Case
Junction to Ambient
Junction to Ambient (minimum foot-
print, FR4 board)
EAS
RθJC
RθJA
RθJA
500
1.0
62.5
50
Maximum Temperature for Soldering
Purposes, 1/8from case for 10 s
TL 260
Unit
Volts
Amps
Watts
W/°C
Watts
°C
mJ
°C/W
°C
http://onsemi.com
75 AMPERES
50 VOLTS
RDS(on) = 9.5 mΩ
NChannel
D
G
S
12
3
4
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
MTB75N05HD
YWW
12
Gate Drain
3
Source
MTB75N05HD = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MTB75N05HD
MTB75N05HDT4
D2PAK
D2PAK
50 Units/Rail
800/Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 7
1
Publication Order Number:
MTB75N05HD/D


  ON Semiconductor Electronic Components Datasheet  

MTB75N05HD Datasheet

Power MOSFET

No Preview Available !

MTB75N05HD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
(VGS = 0, ID = 250 μAdc)
Temperature Coefficient (Positive)
(Cpk 2) (Note 2)
Symbol
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 50 V, VGS = 0)
(VDS = 50 V, VGS = 0, TJ = 125°C)
GateBody Leakage Current
(VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
(Cpk 1.5) (Note 2)
VGS(th)
Static DraintoSource OnResistance (Note 3)
(VGS = 10 Vdc, ID = 20 Adc)
(Cpk 3.0) (Note 2)
DraintoSource OnVoltage (VGS = 10 Vdc) (Note 3)
(ID = 75 A)
(ID = 20 Adc, TJ = 125°C)
Forward Transconductance (VDS = 10 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS (Note 2)
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 V, VGS = 0,
f = 1.0 MHz)
(Cpk 2.0)
(Cpk 2.0)
(Cpk 2.0)
SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
(VDD = 25 V, ID = 75 A,
VGS = 10 V,
RG = 9.1 Ω)
Gate Charge
(VDS = 40 V, ID = 75 A,
VGS = 10 V)
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 2)
(IS = 75 A, VGS = 0) (Cpk 10)
(IS = 20 A, VGS = 0)
(IS = 20 A, VGS = 0, TJ = 125°C)
Reverse Recovery Time
(IS = 37.5 A, VGS = 0,
dIS/dt = 100 A/μs)
Reverse Recovery Stored Charge
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from drain lead 0.25from package to center of die)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 μs, Duty Cycle 2%.
2. Reflects Typical Values. Cpk = Absolute Value of (SPEC AVG) / 3 * SIGMA).
3. For accurate measurements, good Kelvin contact required.
4. Switching characteristics are independent of operating junction temperature.
LS
Min
50
2.0
15
Typ Max Unit
− − Vdc
54.9 mV/°C
μAdc
10
100
nAdc
100
6.3
7.0
0.63
2600
1000
230
15
170
70
100
71
13
33
26
0.97
0.80
0.68
57
40
17
0.17
3.5
4.5
7.5
4.0 Vdc
mV/°C
mΩ
9.5
Vdc
0.34
mhos
3900
1300
300
pF
30 ns
340
140
200
100 nC
Vdc
1.00
ns
μC
nH
http://onsemi.com
2


Part Number MTB75N05HD
Description Power MOSFET
Maker ON Semiconductor
PDF Download

MTB75N05HD Datasheet PDF






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