MTB75N05HD
MTB75N05HD is Power MOSFET manufactured by onsemi.
Preferred Device
Power MOSFET 75 Amps, 50 Volts
N- Channel D2PAK
This Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a
Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Short Heatsink Tab Manufactured
- Not Sheared
- Specially Designed Leadframe for Maximum Power Dissipation w These devices are available in Pb- free package(s). Specifications herein apply to both standard and Pb- free devices. Please see our website at .onsemi. for specific Pb- free orderable part numbers, or contact your local ON Semiconductor sales office or representative.
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain- to- Source Voltage
VDSS
Drain- to- Gate Voltage (RGS = 1.0 MΩ)
VDGR
Gate- to- Source Voltage
- Continuous
± 20
Drain Current
- Continuous
ID 75
Drain Current
- Continuous @ 100°C
ID 65
Drain Current
- Single Pulse (tp ≤ 10 μs) IDM 225
Total Power Dissipation Derate above 25°C
Total Power Dissipation @ TA = 25°C (minimum footprint, FR- 4 board)
PD 125 1.0 2.5
Operating and Storage Temperature Range
TJ, Tstg
- 55 to 150
Single Pulse Drain- to- Source Avalanche...
