* VDSS 100 V http://onsemi.com RDS(ON) TYP 0.22 W ID MAX 10 A N
* Channel D
* Avalanche Energy Specified
* Source
* to
* Drain Diode Recovery Time Comparable to a Discrete
* Fast Recovery Diode Diode is Characterized for Use in Bridge C
MTD10N10EL Datasheet (104.99 KB)
MTD10N10EL
104.99 KB
Power field effect transistor dpak.
MTD10N10EL TMOS E FET™ Power Field Effect Transistor DPAK for Surface Mount N Channel Enhancement Mode Silicon Gate This advan.
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