Datasheet Summary
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MTD6N15 Power Field Effect Transistor DPAK for Surface Mount
N- Channel Enhancement- Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
- Silicon Gate for Fast Switching Speeds
- Low RDS(on)
- 0.3 Ω Max
- Rugged
- SOA is Power Dissipation Limited
- Source- to- Drain Diode Characterized for Use With Inductive Loads
- Low Drive Requirement
- VGS(th) = 4.0 V Max
- Surface Mount Package on 16 mm Tape
MAXIMUM RATINGS
Rating Drain- Source Voltage Drain- Gate Voltage (RGS = 1.0 MΩ) Gate- Source Voltage
- Continuous Gate- Source Voltage
- Non- Repetitive (tp ≤ 50...
