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MTD6N15 Power Field Effect Transistor DPAK for Surface Mount
N−Channel Enhancement−Mode Silicon Gate
This TMOS Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. • Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.3 Ω Max • Rugged — SOA is Power Dissipation Limited • Source−to−Drain Diode Characterized for Use With Inductive Loads • Low Drive Requirement — VGS(th) = 4.0 V Max • Surface Mount Package on 16 mm Tape
MAXIMUM RATINGS
Rating Drain−Source Voltage Drain−Gate Voltage (RGS = 1.
MTD6N15 Datasheet
