MTD9N10E
MTD9N10E is Power MOSFET manufactured by onsemi.
Preferred Device
Power MOSFET 9 Amps, 100 Volts
N- Channel DPAK
This advanced Power MOSFET is designed to withstand high energy in the avalanche and mutation modes. The new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
- Avalanche Energy Specified
- Source- to- Drain Diode Recovery Time parable to a
Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature
- Replaces MTD6N10
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value
Drain- Source Voltage
Drain- Gate Voltage (RGS = 1.0 MΩ)
Gate- Source Voltage
- Continuous
- Non- Repetitive (tp ≤ 10 ms)
Drain Current
- Continuous Drain Current
- Continuous @ 100°C Drain Current
- Single Pulse (tp ≤ 10 µs)
Total Power Dissipation Derate above 25°C
Total Power Dissipation @ TA = 25°C, when mounted to minimum remended pad size
VDSS VDGR
VGS VGSM
ID ID IDM PD
± 20 ± 30
9.0 5.0 27
40 0.32 1.75
Operating and Storage Temperature Range
TJ, Tstg
- 55 to 150
Single Pulse Drain- to- Source Avalanche
Energy
- Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10...
