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TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage−blocking capability without degrading
performance over time. In addition, this advanced TMOS E−FET is
designed to withstand high energy in the avalanche and commutation
modes. This new energy efficient design also offers a drain−to−source
diode with a fast recovery time. Designed for low voltage, high speed
switching applications in power supplies, converters, PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
MTP8N50E Datasheet
