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MTP8N50E - Power Field Effect Transistor

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™Designer's Data Sheet TMOS E-FET.™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time.