MTP8N50E Datasheet | onsemi

TMOS E- FET.™ Power Field Effect Transistor N- Channel Enhancement- Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- blocking capability without degrading performance over time. In addition, this advanced TMOS E- FET is designed to withstand high energy in the avalanche and mutation modes. This new energy efficient design also offers a drain- to- source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters, PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical...