Datasheet4U Logo Datasheet4U.com

N01S818HA - 1 Mb Ultra-Low Power Serial SRAM

Datasheet Summary

Description

CS All Chip Select A low level selects the device and a high level puts the device in standby mode.

If CS is brought high during a program cycle, the cycle will complete and then the device will enter standby mode.

When CS is high, SO is in high-Z.

Features

  • Power Supply Range: 1.7 to 2.2 V.
  • Very Low Typical Standby Current < 1 mA.
  • Very Low Operating Current < 10 mA.
  • Simple Serial Interface.
  • Single-bit SPI Access.
  • DUAL-bit and QUAD-bit SPI-like Access.
  • Flexible Operating Modes.
  • Word Mode.
  • Page Mode.
  • Burst Mode (Full Array).
  • High Frequency Read and Write Operation.
  • Clock Frequency 20 MHz.
  • Built-in Write Protection (CS High).

📥 Download Datasheet

Datasheet preview – N01S818HA

Datasheet Details

Part number N01S818HA
Manufacturer ON Semiconductor
File Size 123.50 KB
Description 1 Mb Ultra-Low Power Serial SRAM
Datasheet download datasheet N01S818HA Datasheet
Additional preview pages of the N01S818HA datasheet.
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
N01S818HA 1 Mb Ultra-Low Power Serial SRAM Standard SPI Interface and Multiplex DUAL and QUAD Interface Overview The ON Semiconductor serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed Static Random Access Memory, internally organized as 128 K words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device.
Published: |