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N04L63W2A - 4Mb Ultra-Low Power Asynchronous CMOS SRAM

General Description

Pin Name A0-A17 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Data Inputs/Outputs Power Ground Not Connected N04L63W2A TSOP-II I/O14 I/O13 I/O15 NC NC A8 48 Pin BGA (

Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts.
  • Very low standby current 4.0µA at 3.0V (Typical).
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical).
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical).
  • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.8V.
  • Very fast output enable access time 25ns OE access time.
  • Automat.

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Datasheet Details

Part number N04L63W2A
Manufacturer onsemi
File Size 220.16 KB
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N04L63W2A Datasheet

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N04L63W2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L63W2A is an integrated memory device containing a 4 Mbit Static Random Access Memory organized as 262,144 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device. The N04L63W2A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.