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N04L63W1A

Manufacturer: onsemi

N04L63W1A datasheet by onsemi.

N04L63W1A datasheet preview

N04L63W1A Datasheet Details

Part number N04L63W1A
Datasheet N04L63W1A_ONSemiconductor.pdf
File Size 219.25 KB
Manufacturer onsemi
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
N04L63W1A page 2 N04L63W1A page 3

N04L63W1A Overview

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently.

N04L63W1A Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
  • Very low standby current 4.0µA at 3.0V (Typical)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
  • Simple memory control Single Chip Enable (CE) Output Enable (OE) for memory expansion
  • Low voltage data retention Vcc = 1.8V
  • Very fast output enable access time 25ns OE access time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • pact space saving BGA package available

N04L63W1A Applications

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
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N04L63W2A 4Mb Ultra-Low Power Asynchronous CMOS SRAM

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