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N04L63W2A

Manufacturer: onsemi

N04L63W2A datasheet by onsemi.

N04L63W2A datasheet preview

N04L63W2A Datasheet Details

Part number N04L63W2A
Datasheet N04L63W2A_ONSemiconductor.pdf
File Size 220.16 KB
Manufacturer onsemi
Description 4Mb Ultra-Low Power Asynchronous CMOS SRAM
N04L63W2A page 2 N04L63W2A page 3

N04L63W2A Overview

The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with two chip enable (CE1 and CE2) controls and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently and can also be used to deselect the device.

N04L63W2A Key Features

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
  • Very low standby current 4.0µA at 3.0V (Typical)
  • Very low operating current 2.0mA at 3.0V and 1µs (Typical)
  • Very low Page Mode operating current 0.8mA at 3.0V and 1µs (Typical)
  • Simple memory control Dual Chip Enables (CE1 and CE2) Output Enable (OE) for memory expansion
  • Low voltage data retention Vcc = 1.8V
  • Very fast output enable access time 25ns OE access time
  • Automatic power down to standby mode
  • TTL patible three-state output driver
  • pact space saving BGA package available

N04L63W2A Applications

  • Single Wide Power Supply Range 2.3 to 3.6 Volts
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N04L63W1A 4Mb Ultra-Low Power Asynchronous CMOS SRAM

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