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NCD57090E Datasheet IGBT/MOSFET Gate Driver

Manufacturer: onsemi

Overview: Isolated High Current IGBT/MOSFET Gate Driver NCx57090y, NCx57091y (x = D or V, y = A, B, C, D, E or F) NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

Download the NCD57090E datasheet PDF. This datasheet also includes the NCD57090A variant, as both parts are published together in a single manufacturer document.

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Key Features

  • High Peak Output Current (+6.5 A/.
  • 6.5 A).
  • Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn.
  • on (Version A/D/F).
  • Short Propagation Delays with Accurate Matching.
  • IGBT/MOSFET Gate Clamping during Short Circuit.
  • IGBT/MOSFET Gate Active Pull Down.
  • Tight UVLO Thresholds for Bias Flexibility.
  • Wide Bias Voltage Range including Negative VEE2 (Version B).
  • 3.3 V, 5 V, an.

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More Datasheets from onsemi

Part Number Description
NCD57090A IGBT/MOSFET Gate Driver
NCD57090B IGBT/MOSFET Gate Driver
NCD57090C IGBT/MOSFET Gate Driver
NCD57090D IGBT/MOSFET Gate Driver
NCD57090F IGBT/MOSFET Gate Driver
NCD57091A IGBT/MOSFET Gate Driver
NCD57091B IGBT/MOSFET Gate Driver
NCD57091C IGBT/MOSFET Gate Driver
NCD5700 High Current IGBT Gate Driver
NCD57000 Isolated High Current IGBT Gate Driver