NCD57091B onsemi Datasheet

NCD57091B Key Features

• High Peak Output Current (+6.5 A/-6.5 A)
• Low Clamp Voltage Drop Eliminates the Need of Negative Power
• Short Propagation Delays with Accurate Matching
• IGBT/MOSFET Gate Clamping during Short Circuit
• IGBT/MOSFET Gate Active Pull Down
• Tight UVLO Thresholds for Bias Flexibility
• Wide Bias Voltage Range including Negative VEE2 (Version B)
• 3.3 V, 5 V, and 15 V Logic Input
• 5 kVrms Galvanic Isolation
• High Transient Immunity