NCV57080A Datasheet | onsemi

Isolated High Current IGBT/MOSFET Gate Driver NCx57080y, NCx57081y (x = D or V, y = A, B or C) NCx57080y, NCx57081y are high- current single channel IGBT/MOSFET gate drivers with 3.75 k Vrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept plementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C) for system design convenience. The driver acmodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in narrow- body SOIC- 8 package. Features - High Peak Output Current (+6.5 A/- 6.5 A) - Low Clamp Voltage Drop Eliminates the Need of Negative Power Supply to Prevent Spurious Gate Turn- on (Version A) - Short Propagation Delays with Accurate Matching - IGBT/MOSFET Gate Clamping during Short Circuit - IGBT/MOSFET Gate Active Pull Down - Tight UVLO Thresholds for Bias Flexibility - Wide Bias Voltage Range including Negative VEE2 (Version B) - 3.3 V, 5 V, and 15 V Logic Input - 3.75 k VRMS VISO (I- O) (to meet UL1577 Requirements) - Safety and Regulatory Approvals: - UL1577 Certified, 3750 VACRMS for 1 Minute - DIN VDE V 0884- 11 Certification Pending, 870 VPK Working Insulation Voltage - High Transient Immunity - High Electromagnetic Immunity - NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC- Q100 Qualified and PPAP Capable - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Typical Applications - Motor Control - Uninterruptible Power Supplies (UPS) - Automotive Applications - Industrial Power Supplies - Solar...