Datasheet Summary
Field Effect Transistor Dual, N & P-Channel, Enhancement Mode
General Description These dual N & P- Channel Enhancement Mode Field Effect
Transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply application.
Features
- Q1 0.51 A, 60 V
RDS(ON) = 2 W @ VGS = 10 V RDS(ON) = 4 W @ VGS = 4.5 V
- Q2
- 0.34 A, 60 V
RDS(ON) = 5 W @ VGS =
- 10 V RDS(ON) = 7.5 W @ VGS =
- 4.5 V
- High Saturation Current
- High Density Cell Design...
