Datasheet4U Logo Datasheet4U.com

NDC7001 - Dual N&P-Channel MOSFET

General Description

These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

Key Features

  • N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current. ____________________________________________________________________________________________ 4 3 5 2 6 SuperSOTTM-6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID Parameter Drain-Source Voltage T A = 25°C unless other.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NDC7001C Dual N&P-Channel MOSFET ON Semiconductor
NDC25170A SiC Schottky Diode ON Semiconductor
NDC300RA Integrated Driver and MOSFET NIKO-SEM
NDC301RA Integrated Driver and MOSFET NIKO-SEM

Other Datasheets by Fairchild (now onsemi)

Part Number Description
NDC7001C Dual N&P-Channel MOSFET
NDC7002 Dual N-Channel MOSFET
NDC7002N Dual N-Channel MOSFET
NDC7003P Dual P-Channel MOSFET
NDC631N N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
March 1996 NDC7001C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage, low current, switching, and power supply applications. Features N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.