NDC7001
Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These devices is particularly suited for low voltage, low current, switching, and power supply applications.
Features
N-Channel 0.51A, 50V, RDS(ON) = 2Ω @ VGS=10V P-Channel -0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary Super SOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.
Super SOTTM-6
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage
T A = 25°C unless otherwise noted
N-Channel 50 20
(Note 1a)
P-Channel -50 -20 -0.34 -1 0.96...
