NDC7003P
Description
These dual P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
-0.34A, -50V. RDS(ON)= 5Ω @ VGS=-10V. High density cell design for low RDS(ON). Proprietary Super SOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High saturation current.
SOT-6 (Super SOTTM-6)
Absolute Maximum Ratings T A = 25°C unless otherwise noted
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage
- Continuous Drain Current
- Continuous
- Pulsed PD Maximum Power Dissipation
(Note 1a) (Note 1b)...
