NDP10N60Z Datasheet | onsemi

Features - - - - - - - - - - Low ON Resistance Low Gate Charge Zener Diode- protected Gate 100% Avalanche Tested ROHS pliant This is a Pb- Free Device Adapter (Notebook, Printer, Gaming) LCD Panel Power ATX Power Supplies Lighting Ballasts Rating Drain- to- Source Voltage Continuous Drain Current Continuous Drain Current TA = 100°C Pulsed Drain Current, VGS @ 10 V Power Dissipation (Note 1) Gate- to- Source Voltage Single Pulse Avalanche Energy, L = 6.0 m H, ID = 10 A ESD (HBM) (JESD 22- 114- B) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 13) Peak Diode Recovery Continuous Source Current (Body Diode) Maximum Temperature for Soldering Leads, 0.063″ (1.6 mm) from Case for 10 s Package Body for 10 s Operating Junction and Storage Temperature Range Symbol VDSS ID ID IDM PD VGS EAS 36 ±30 300 NDF10N60Z NDP10N60Z Unit V A A A 125 W V m J http://onsemi. VDSS 600 V RDS(ON) (TYP) @ 5 A 0.65 Ω Applications N- Channel D (2) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) 600 (Note 1) 10 (Note 2) 5.7 (Note 2) 36 (Note 2) G (1) TO- 220FP CASE 221D STYLE 1 S (3) MARKING DIAGRAM Vesd VISO 4500 V V TO- 220AB CASE 221A STYLE 5 NDF10N60ZG or NDP10N60ZG AYWW Gate Source dv/dt IS TL 4.5 (Note 3) 10 300 260 V/ns A °C Drain A Y WW G = Location Code = Year = Work Week = Pb- Free Package TPKG TJ, Tstg - 55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size, 1 oz cu 2. Limited by maximum junction temperature .. 3. IS ≤ 10 A, di/dt ≤ 200 A/ms, VDD = 80% BVDSS ORDERING INFORMATION Device NDF10N60ZG NDP10N60ZG Package TO- 220FP TO- 220AB Shipping 50 Units/Rail In Development © Semiconductor ponents Industries, LLC, 2009 May, 2009 - Rev. 1 Publication...