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NDS0610 - P-Channel Enhancement Mode Field Effect Transistor

General Description

This P

Produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance, provide rugged and reliable performance and fast switching.

Key Features

  • 0.12 A,.
  • 60 V.
  • RDS(on) = 10 W @ VGS =.
  • 10 V.
  • RDS(on) = 20 W @ VGS =.
  • 4.5 V.
  • Voltage Controlled P.
  • Channel Small Signal Switch.
  • High Density Cell design for Low RDS(on).
  • High Saturation Current.

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Datasheet Details

Part number NDS0610
Manufacturer onsemi
File Size 210.26 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet NDS0610 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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P-Channel Enhancement Mode Field Effect Transistor NDS0610 General Description This P−Channel Enhancement Mode Field Effect Transistors are Produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120 mA DC and can deliver current up to 1 A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features • −0.12 A, −60 V ♦ RDS(on) = 10 W @ VGS = −10 V ♦ RDS(on) = 20 W @ VGS = −4.