NDS0610 Datasheet | Fairchild Semiconductor

July 2002 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch. Features - - 0.12A, - 60V. RDS(ON) = 10 Ω @ VGS = - 10 V RDS(ON) = 20 Ω @ VGS = - 4.5 V -...