NDS0610
NDS0610 is manufactured by onsemi.
P-Channel Enhancement Mode Field Effect Transistor
General Description This P- Channel Enhancement Mode Field Effect Transistors are
Produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on- state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120 mA DC and can deliver current up to 1 A.
This product is particularly suited to low voltage applications requiring a low current high side switch.
Features
- - 0.12 A,
- 60 V
- RDS(on) = 10 W @ VGS =
- 10 V
- RDS(on) = 20 W @ VGS =
- 4.5 V
- Voltage Controlled P-...
