NDS0610 Description
This P−Channel Enhancement Mode Field Effect Transistors are Produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on−state resistance, provide rugged and reliable performance and fast switching. They can be used, with a minimum of effort, in most applications requiring up to 120 mA DC and can deliver current up to 1.
NDS0610 Key Features
- 0.12 A, -60 V
- RDS(on) = 10 W @ VGS = -10 V
- RDS(on) = 20 W @ VGS = -4.5 V
- Voltage Controlled P-Channel Small Signal Switch
- High Density Cell design for Low RDS(on)
- High Saturation Current