NDS351AN Datasheet | onsemi

N-Channel, Logic Level, Power Trench® MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are particularly suited for low voltage applications in notebook puters, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. - 1.4 A, 30 V. RDS(ON) = 160 mΩ @ VGS = 10 V RDS(ON) = 250 mΩ @ VGS = 4.5 V - Ultra-Low gate charge - Industry standard outline SOT-23 surface mount package using proprietary Super SOTTM-3 design for superior thermal and electrical capabilities - High performance trench technology for extremely low RDS(ON) Super SOT...