* Max Junction Temperature 175°C
* Avalanche Rated 506 mJ
* High Surge Current Capacity
* Positive Temperature Coefficient
* Ease of Paralleling
* No Reverse Recovery / No Forward Recovery
* These Devices are Halogen Free/BFR Free and are RoHS
NDSH25170A Datasheet (350.09 KB)
NDSH25170A
350.09 KB
Silicon carbide schottky diode.
DATA SHEET www.onsemi.com Silicon Carbide (SiC) Schottky Diode EliteSiC, 25 A, 1700 V, D1, TO-247-2L NDSH25170A 1. Cathode 2. Anode Schott.
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