NGTB15N60EG - IGBT

Features

a robust and cost effective Non.
Punch Through (NPT) Trench construction, and provides superior performance in demanding switching.

onsemi

Datasheet Details

Part number	NGTB15N60EG
Manufacturer	onsemi
File Size	133.19 KB
Description	IGBT
Datasheet	NGTB15N60EG Datasheet
Additional preview pages of the NGTB15N60EG datasheet.

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Full PDF Text Transcription

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NGTB15N60EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co−packaged reverse recovery diode with a low forward voltage.

Published: May 26, 2013 |