Download NGTB30N60L2WG Datasheet PDF
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NGTB30N60L2WG Key Features

  • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
  • IGBT IC=100A (Tc=25°C)
  • IGBT tf=80ns typ
  • Low switching loss in higher frequency

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NGTB30N60L2WG Description

ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.