NGTB30N60L2WG Datasheet - ON Semiconductor

N-Channel IGBT

* IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)

* IGBT IC=100A (Tc=25°C)

* IGBT tf=80ns typ.

* Low switching loss in higher frequency applications

* Maximum junction temperature Tj=175°C

* Diode VF=1.7V typ. (IF=30A)

* Diode trr=70ns typ.

NGTB30N60L2WG

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N-channel igbt.

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NGTB30N60L2WG N-Channel IGBT ON Semiconductor

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