| Title | IGBT 트렌치 필드 스톱 600V 60A 189W 스루홀 TO-247-3 |
| Description | NGTB30N60SWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free... |
| Features |
a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a l...
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| Datasheet |
 NGTB30N60SWG Datasheet - 176.72KB |
| Distributor |
DigiKey |
| Stock | 1873 In stock |
| Price |
127 units: 3287.189 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Rochester Electronics LLC NGTB30N60SWG
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
127 units: 3287.189 KRW |
BuyNow |
|
 Rochester Electronics |
1000 units: 2.03 USD 500 units: 2.15 USD 100 units: 2.25 USD 25 units: 2.34 USD 1 units: 2.39 USD |
BuyNow |
