NGTB30N60L2WG - N-Channel IGBT

Features

IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V).
IGBT IC=100A (Tc=25°C).
IGBT tf=80ns typ.
Low switching loss in higher frequency.

ON Semiconductor

Datasheet Details

Part number	NGTB30N60L2WG
Manufacturer	ON Semiconductor
File Size	764.45 KB
Description	N-Channel IGBT
Datasheet	NGTB30N60L2WG Datasheet
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Full PDF Text Transcription

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Ordering number : ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.com Features • IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V) • IGBT IC=100A (Tc=25°C) • IGBT tf=80ns typ. • Low switching loss in higher frequency applications • Maximum junction temperature Tj=175°C • Diode VF=1.7V typ. (IF=30A) • Diode trr=70ns typ.

Published: Feb 9, 2016 |