NGTB30N60L2WG Description
ENA2308B NGTB30N60L2WG N-Channel IGBT With Low VF Switching Diode 600V, 30A, VCE(sat);1.4V http://onsemi.
NGTB30N60L2WG Key Features
- IGBT VCE(sat)=1.4V typ. (IC=30A, VGE=15V)
- IGBT IC=100A (Tc=25°C)
- IGBT tf=80ns typ
- Low switching loss in higher frequency