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NGTG15N60S1EG - IGBT

Features

  • a robust and cost effective Non.
  • Punch Through (NPT) Trench construction, and provides superior performance in demanding switching.

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NGTG15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications.
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