Datasheet Summary
NIF9N05CL Protected Power MOSFET
2.6 A, 52 V, N- Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT- 223 Package http://onsemi. Benefits
- High Energy Capability for Inductive Loads
- Low Switching Noise Generation
Features
VDSS (Clamped) 52 V
RDS(ON) TYP 107 mW
ID MAX 2.6 A
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Diode Clamp Between Gate and Source ESD Protection
- HBM 5000 V Active Over- Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb- Free Packages are Available
Drain (Pins 2, 4)
Gate (Pin 1)
Overvoltage Protection
MPWR
Applications
ESD Protection
- Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers...