NIF62514 Datasheet | onsemi

features . Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features http://onsemi. 6.0 AMPERES- 40 VOLTS CLAMPED RDS(on) = 90 m W Drain Overvoltage Protection MPWR - - - - - - - - Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection Low RDS(on) IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection Gate Input ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Drain-to-Gate Voltage Internally Clamped (RGS = 1.0 MW) Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C - Continuous @ TA = 100°C - Pulsed (tp ≤ 10 ms) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) @ TA = 25°C (Note 3) Symbol VDSS VDGR VGS ID ID IDM PD 1.1 1.73 8.93 14 114 72.3 300 W (Top View) °C/W 62514 L WW = Specific Device Code = Location Code = Work Week Value 40 40 "16 Unit Vdc Vdc Vdc SOT-223 CASE 318E STYLE 3 MARKING DIAGRAM 1 GATE 2 DRAIN 3 SOURCE 62514 LWW 4 DRAIN Internally Limited Total Power Dissipation Thermal Resistance - Junction-to-Tab Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain- to- Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, VDS = 40 Vdc, IL = 2.8 Apk, L = 80 m H, RG = 25 W) Operating and Storage Temperature Range 1. Mounted onto min pad board. 2. Mounted onto 1″ pad board. 3. Mounted onto large heatsink. Rq JT Rq JA Rq JA EAS m J ORDERING INFORMATION Device Package SOT-223 SOT-223 Shipping 1000/Tape & Reel 4000/Tape & Reel TJ, Tstg -55 to...