NIF9N05CL - Protected Power MOSFET

Datasheet Summary

Features

VDSS (Clamped) 52 V RDS(ON) TYP 107 mW ID MAX 2.6 A.
Diode Clamp Between Gate and Source ESD Protection.
HBM 5000 V Active Over.
Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb.
Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) RG Overvoltage Protection MPWR.

ON Semiconductor

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Datasheet Details

Part number	NIF9N05CL
Manufacturer	ON Semiconductor
File Size	98.19 KB
Description	Protected Power MOSFET
Datasheet	NIF9N05CL Datasheet
Additional preview pages of the NIF9N05CL datasheet.

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Full PDF Text Transcription

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NIF9N05CL Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection in a SOT−223 Package http://onsemi.com Benefits • High Energy Capability for Inductive Loads • Low Switching Noise Generation Features VDSS (Clamped) 52 V RDS(ON) TYP 107 mW ID MAX 2.6 A • • • • • • Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb−Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) RG Overvoltage Protection MPWR Applications ESD Protection • Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers www.DataSheet4U.

Published: Apr 27, 2007 |