NIF9N05CL Datasheet | onsemi

Features VDSS (Clamped) 52 V RDS(ON) TYP 107 m W ID MAX 2.6 A - - - - - - Diode Clamp Between Gate and Source ESD Protection - HBM 5000 V Active Over- Voltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance Pb- Free Packages are Available Drain (Pins 2, 4) Gate (Pin 1) Overvoltage Protection MPWR Applications ESD Protection - Automotive and Industrial Markets: Solenoid Drivers, Lamp Drivers, Small Motor Drivers .. MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Drain- to- Source Voltage Internally Clamped Gate- to- Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C - Single Pulse (tp = 10 ms) (Note 1) Total Power Dissipation @ TA = 25°C (Note 1) Operating and Storage Temperature Range Single Pulse Drain- to- Source Avalanche Energy (VDD = 50 V, ID(pk) = 1.17 A, VGS = 10 V, L = 160 m H, RG = 25 W) Thermal Resistance, Junction- to- Ambient (Note 1) Junction- to- Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds Symbol VDSS VGS ID IDM PD TJ, Tstg EAS 2.6 10 1.69 - 55 to 150 110 A W °C m J GATE AYW F9N05 G G 2 °C/W Rq JA Rq JA TL 74 169 260 °C DRAIN 3 SOURCE (Top View) Value 52- 59 ±15 Unit V V SOT- 223 CASE 318E STYLE 3 Source (Pin 3) MARKING DIAGRAM 1 4 DRAIN Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Remended Operating Conditions is not implied. Extended exposure to stresses above the Remended Operating Conditions may affect device reliability. 1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2). 2. When surface mounted to a FR4 board using minimum remended pad size, (Cu area 0.412 in2). A = Assembly Location Y = Year W = Work Week F9N05 = Specific Device Code G = Pb- Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this...