NIS4461MT3TXG Datasheet | onsemi

Features - Integrated Power Device - Power Device Thermally Protected - No External Current Shunt Required - 9 V to 24 V Input Range - 39 m W Typical - Internal Charge Pump - Internal Undervoltage Lockout Circuit - ESD Ratings: Human Body Model (HBM); 2000 V Charged Device Model (CDM); 2000 V Latch- Up; Class 1 - These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant Typical Applications - Hard Drives - Mother Board Power Management - Fan Drives - Industrial - Handheld Devices - Portable Instruments .onsemi. 4.2 AMP, 9 to 24 VOLT ELECTRONIC FUSE MARKING DIAGRAM WDFN10 CASE 522AA XXXXX XXXXX ALYWG XXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb- Free Package (Note: Microdot may be in either location) PIN CONNECTIONS Src d V/dt Src En/Flt Src ILIM Src NC/ISENSE Src WDFN10 (Top View) ORDERING INFORMATION See detailed ordering, marking and shipping information in the ordering information section on page 11 of this data...