NIS5420
Features
- Integrated Power Device
- Power Device Thermally Protected
- No External Current Shunt Required
- 8 V to 18 V Input Range
- 39 m W Typical
- Internal Charge Pump
- Internal Undervoltage Lockout Circuit
- Internal Overvoltage Clamp
- ESD Ratings: Human Body Model (HBM); 2000 V
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
Typical Applications
- Hard Drives
- Mother Board Power Management
- Fan Drives
.onsemi.
4.6 AMP, 12 VOLT ELECTRONIC FUSE
MARKING DIAGRAM
WDFN10 CASE 522AA
XXXXX XXXXX ALYWG
XXX = Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb- Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Src d V/dt
Src
En/Flt
Src
ILIM
Src
NC/ISENSE
Src
WDFN10 (Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the ordering information section on page 11 of this data sheet.
© Semiconductor ponents Industries, LLC, 2018
March, 2021...
