NJVNJD2873T4G
NJVNJD2873T4G is Power Transistors manufactured by onsemi.
atures
- High DC Current Gain
- Low Collector- Emitter Saturation Voltage
- High Current- Gain
- Bandwidth Product
- Epoxy Meets UL 94 V- 0 @ 0.125 in
- NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101
Qualified and PPAP Capable
- These Devices are Pb- Free, Halogen Free/BFR Free and are Ro HS pliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current
- Continuous Collector Current
- Peak Base Current Total Device Dissipation
@ TC = 25°C Derate above 25°C
VCB VCEO VEB
IC ICM IB PD
50 Vdc 50 Vdc 5 Vdc 2 Adc 3 Adc 0.4 Adc
15 W 0.1 W/°C
Total Device Dissipation @ TA = 25°C- Derate above 25°C
PD 1.68 W
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
- 65 to +175 °C
- Human Body...
