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  ON Semiconductor Electronic Components Datasheet  

NJW0281G Datasheet

(NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors

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NJW0281G (NPN)
NJW0302G (PNP)
Complementary NPN-PNP
Power Bipolar Transistors
These complementary devices are lower power versions of the
popular NJW3281G and NJW1302G audio output transistors. With
superior gain linearity and safe operating area performance, these
transistors are ideal for high fidelity audio amplifier output stages and
other linear applications.
Features
Exceptional Safe Operating Area
NPN/PNP Gain Matching within 10% from 50 mA to 3 A
Excellent Gain Linearity
High BVCEO
High Frequency
These Devices are PbFree and are RoHS Compliant
Benefits
Reliable Performance at Higher Powers
Symmetrical Characteristics in Complementary Configurations
Accurate Reproduction of Input Signal
Greater Dynamic Range
High Amplifier Bandwidth
Applications
HighEnd Consumer Audio Products
Home Amplifiers
Home Receivers
Professional Audio Amplifiers
Theater and Stadium Sound Systems
Public Address Systems (PAs)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
CollectorBase Voltage
EmitterBase Voltage
CollectorEmitter Voltage 1.5 V
Collector Current Continuous
Collector Current Peak (Note 1)
Base Current Continuous
Total Power Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCBO
VEBO
VCEX
IC
ICM
IB
PD
TJ, Tstg
250
250
5.0
250
15
30
1.5
150
65 to
+150
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Adc
Watts
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.
© Semiconductor Components Industries, LLC, 2013
September, 2013 Rev. 1
1
http://onsemi.com
15 AMPERES
COMPLEMENTARY SILICON
POWER TRANSISTORS
250 VOLTS, 150 WATTS
PNP
COLLECTOR 2, 4
NPN
COLLECTOR 2, 4
1
BASE
EMITTER 3
1
BASE
EMITTER 3
MARKING
4 DIAGRAM
NJWxxxG
AYWW
1 23
xxxx
G
A
Y
WW
TO3P
CASE 340AB
STYLES 1,2,3
12
= 0281 or 0302
= PbFree Package
= Assembly Location
= Year
= Work Week
3
ORDERING INFORMATION
Device
NJW0281G
NJW0302G
Package
TO3P
(PbFree)
TO3P
(PbFree)
Shipping
30 Units/Rail
30 Units/Rail
Publication Order Number:
NJW0281/D


  ON Semiconductor Electronic Components Datasheet  

NJW0281G Datasheet

(NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors

No Preview Available !

NJW0281G (NPN) NJW0302G (PNP)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 30 mA, IB = 0)
Collector Cutoff Current
(VCB = 250 V, IE = 0)
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 A, VCE = 5.0 V)
(IC = 1.0 A, VCE = 5.0 V)
(IC = 3.0 A, VCE = 5.0 V)
CollectorEmitter Saturation Voltage
(IC = 5.0 A, IB = 0.5 A)
BaseEmitter On Voltage
(IC = 5.0 A, VCE = 5.0 V)
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 1.0 A, VCE = 5.0 V, ftest = 1.0 MHz)
Output Capacitance
(VCB = 10 V, IE = 0, ftest = 1.0 MHz)
Symbol
RθJC
Value
0.83
Symbol
VCEO(sus)
ICBO
IEBO
Min
250
Max
10
5.0
hFE
VCE(sat)
VBE(on)
75
75
75
150
150
150
1.0
1.2
fT 30
Cob 400
Unit
°C/W
Unit
V
mA
mA
V
V
MHz
pF
160
140
120
100
80
60
40
20
0
0
20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
100
1.0 ms
10 5.0 ms
100 ms
10 ms
1
DC
0.1
0.01
1
10 100 1000
VCE, COLLECTOREMITTER VOLTAGE (V)
Figure 2. Safe Operating Area
http://onsemi.com
2


Part Number NJW0281G
Description (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors
Maker ON Semiconductor
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NJW0281G Datasheet PDF






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