NJW0302G - Complementary NPN?PNP Power Bipolar Transistors

onsemi

Key Features

Exceptional Safe Operating Area.
NPN/PNP Gain Matching within 10% from 50 mA to 3 A.
Excellent Gain Linearity.
High BVCEO.
High Frequency.
These Devices are Pb-Free and are RoHS Compliant Benefits.
Reliable Performance at Higher Powers.
Symmetrical Characteristics in Complementary Configurations.
Accurate Reproduction of Input Signal.
Greater Dynamic Range.
High Amplifier Bandwidth.

NJW0302G complementary npn?pnp power bipolar transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	NJW0302G
Manufacturer	onsemi
File Size	170.59 KB
Description	Complementary NPN?PNP Power Bipolar Transistors
Datasheet	NJW0302G Datasheet

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Other Datasheets by onsemi

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NJW0281G	Complementary NPN?PNP Power Bipolar Transistors
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Full PDF Text Transcription (Reference)

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Complementary NPN‐PNP Power Bipolar Transistors NJW0281G (NPN), NJW0302G (PNP) These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high fidelity audio amplifier output stages and other linear applications.