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NJW1302G - NPN-PNP Silicon Power Bipolar Transistors

Download the NJW1302G datasheet PDF. This datasheet also covers the NJW3281G variant, as both devices belong to the same npn-pnp silicon power bipolar transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Exceptional Safe Operating Area.
  • NPN/PNP Gain Matching within 10% from 50 mA to 5 A.
  • Excellent Gain Linearity.
  • High BVCEO.
  • High Frequency.
  • These Devices are Pb.
  • Free and are RoHS Compliant Benefits.
  • Reliable Performance at Higher Powers.
  • Symmetrical Characteristics in Complementary Configurations.
  • Accurate Reproduction of Input Signal.
  • Greater Dynamic Range.
  • High Amplifier Bandwidth Applica.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NJW3281G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number NJW1302G
Manufacturer onsemi
File Size 111.84 KB
Description NPN-PNP Silicon Power Bipolar Transistors
Datasheet download datasheet NJW1302G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications.