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NJW1302G - PNP Transistor

General Description

With TO-3PN packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters

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isc Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage -250 VCEO VCEX VEBO Collector-Emitter Voltage Collector-Emitter Voltage VEB= 5V Emitter-Base Voltage -250 -250 -5 IC Collector Current-Continuous -15 ICM Collector Current-Peak -30 IB Base Current-Continuous -1.