NJW1302G Datasheet and Specifications PDF

The NJW1302G is a PNP Silicon Power Bipolar Transistors.

Key Specifications

PackageTO-218-3
Pins3
Max Frequency1 MHz
Height20.1 mm
Length15.8 mm
Width5 mm
Max Operating Temp150 °C
Min Operating Temp-65 °C
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Part NumberNJW1302G Datasheet
Manufactureronsemi
Overview NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear appl.
* Exceptional Safe Operating Area
* NPN/PNP Gain Matching within 10% from 50 mA to 5 A
* Excellent Gain Linearity
* High BVCEO
* High Frequency
* These Devices are Pb
*Free and are RoHS Compliant Benefits
* Reliable Performance at Higher Powers
* Symmetrical Characteristics in Complementary Configura.
Part NumberNJW1302G Datasheet
DescriptionPNP Transistor
ManufacturerInchange Semiconductor
Overview ·With TO-3PN packaging ·Reliable performance at higher powers ·Accurate reproduction of Input signal ·Greater dynamic range ·Minimum Lot-to-Lot variations for robust device performance and reliable op. egistered trademark isc Silicon PNP Power Transistors INCHANGE Semiconductor NJW1302G ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=- 100mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -8.

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