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NJW3281G - NPN-PNP Silicon Power Bipolar Transistors

Key Features

  • Exceptional Safe Operating Area.
  • NPN/PNP Gain Matching within 10% from 50 mA to 5 A.
  • Excellent Gain Linearity.
  • High BVCEO.
  • High Frequency.
  • These Devices are Pb.
  • Free and are RoHS Compliant Benefits.
  • Reliable Performance at Higher Powers.
  • Symmetrical Characteristics in Complementary Configurations.
  • Accurate Reproduction of Input Signal.
  • Greater Dynamic Range.
  • High Amplifier Bandwidth Applica.

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Datasheet Details

Part number NJW3281G
Manufacturer onsemi
File Size 111.84 KB
Description NPN-PNP Silicon Power Bipolar Transistors
Datasheet download datasheet NJW3281G Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NJW3281G (NPN) NJW1302G (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The NJW3281G and NJW1302G are power transistors for high power audio, disk head positioners and other linear applications.