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  ON Semiconductor Electronic Components Datasheet  

NL17SH00 Datasheet

Single 2-Input NAND Gate

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NL17SH00
Single 2-Input NAND Gate
The NL17SH00 is an advanced high speed CMOS 2input NAND
gate fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The NL17SH00 input structure provides protection when voltages
up to 7.0 V are applied, regardless of the supply voltage. This allows
the NL17SH00 to be used to interface 5.0 V circuits to 3.0 V circuits.
Features
High Speed: tPD = 3.0 ns (Typ) at VCC = 5.0 V
Low Power Dissipation: ICC = 1 mA (Max) at TA = 25°C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Pin and Function Compatible with Other Standard Logic Families
These are PbFree Devices
IN A 1
GND 2
IN B 3
5 VCC
4 OUT Y
Figure 1. Pinout (Top View)
IN A &
IN B
OUT Y
Figure 2. Logic Symbol
http://onsemi.com
MARKING
DIAGRAM
SOT953
CASE 527AE
AM
1
A = Specific Device Code
M = Month Code
PIN ASSIGNMENT
1 IN A
2 GND
3 IN B
4 OUT Y
5 VCC
FUNCTION TABLE
Inputs
Output
AB
LL
LH
HL
HH
Y
H
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
August, 2011 Rev. 1
1
Publication Order Number:
NL17SH00/D


  ON Semiconductor Electronic Components Datasheet  

NL17SH00 Datasheet

Single 2-Input NAND Gate

No Preview Available !

NL17SH00
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
TSTG
TL
TJ
PD
MSL
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Current
DC Supply Current per Supply Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Power Dissipation in Still Air
Moisture Sensitivity
0.5 to +7.0
0.5 to +7.0
0.5 to VCC +0.5
20
±20
±25
50
65 to +150
260
+150
50
Level 1
V
V
V
mA
mA
mA
mA
°C
°C
°C
mW
FR Flammability Rating
Oxygen Index: 28 to 34 UL 94 V0 @ 0.125 in
ILATCHUP Latchup Performance
Above VCC and Below GND at 125°C (Note 1)
±100
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
VCC DC Supply Voltage
VIN DC Input Voltage
VOUT
DC Output Voltage
TA Operating Temperature Range
tr , tf Input Rise and Fall Time
VVCCCC
=
=
3.3
5.0
V
V
±
±
0.3
0.5
V
V
Min
2.0
0.0
0.0
55
0
0
Max
5.5
5.5
VCC
+125
100
20
Unit
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature °C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
1
1 10
100 1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
http://onsemi.com
2


Part Number NL17SH00
Description Single 2-Input NAND Gate
Maker ON Semiconductor
Total Page 5 Pages
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